| PART |
Description |
Maker |
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| MA2HD07 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| 1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes
5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MA3S795E MA3S795D MA795WK MA795WA |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA3Z792E MA3Z792D MA3Z792DMA792WA MA792WA MA792WK |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Matsshita / Panasonic
|
| MA3Z793 MA793 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| CDBQR00340-HF12 CDBQR00340-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.03A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBCT360-HF CDBCT340-HF CDBCT3100-HF CDBCT320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=60V, V-R=60V, I-O=3A
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=3A
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=3A
Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=3A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
